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PFD1N60

Wing On
Part Number PFD1N60
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremel...
Datasheet PDF File PFD1N60 PDF File

PFD1N60
PFD1N60

Overview
Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 8.
3 Ω (Typ.
) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters.
PFU1N60/PFD1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 10.
5 Ω ID = 1.
0 A I-PAK(TO-251) 1 2 3 1.
Gate 2.
Drain 3.
Source Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (N...


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