Part Number
|
NT5CB512M4GN |
Manufacturer
|
Nanya |
Description
|
2Gb DDR3 SDRAM G-Die |
Published
|
Oct 18, 2018 |
Detailed Description
|
2Gb DDR3 SDRAM G-Die
NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN
Feature
VDD = VDDQ = 1.5V ± 0.075V(JEDEC ...
|
Datasheet
|
NT5CB512M4GN
|
Overview
2Gb DDR3 SDRAM G-Die
NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN
Feature
VDD = VDDQ = 1.
5V ± 0.
075V(JEDEC Standard Power Supply)
VDD = VDDQ = 1.
35V -0.
0675V/+0.
1V (Backward Compatible to VDD = VDDQ = 1.
5V ±0.
075V)
8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11 WRITE Latency (CWL): 5,6,7,8,9 POSTED CAS ADDITIVE Programmable Additive
Latency (AL): 0, CL-1, CL-2 clock Programmable Sequential / Interleave Burst Type
Through ZQ pin (RZQ:240 ohm±1%)
Programmable Burst Length: 4, 8 8n-bit prefetch architecture Output Driver Impedance Control Differential bidirectional data strobe Interna...
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