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NT5CB512M4GN

Nanya
Part Number NT5CB512M4GN
Manufacturer Nanya
Description 2Gb DDR3 SDRAM G-Die
Published Oct 18, 2018
Detailed Description 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC ...
Datasheet PDF File NT5CB512M4GN PDF File

NT5CB512M4GN
NT5CB512M4GN

Overview
2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.
5V ± 0.
075V(JEDEC Standard Power Supply)  VDD = VDDQ = 1.
35V -0.
0675V/+0.
1V (Backward Compatible to VDD = VDDQ = 1.
5V ±0.
075V)  8 Internal memory banks (BA0- BA2)  Differential clock input (CK, )  Programmable Latency: 5, 6, 7, 8, 9, 10, 11   WRITE Latency (CWL): 5,6,7,8,9  POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock  Programmable Sequential / Interleave Burst Type Through ZQ pin (RZQ:240 ohm±1%)  Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe  Internal(self) calibration:Internal self calibration  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  Auto Self-Refresh  Self-Refresh Temperature  RoHS compliance and Halogen free  Packages: 78-Balls BGA for x4, x8 components REV 1.
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