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Part Number
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DP8205B |
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Manufacturer
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DEVELOPER MICROELECTRONICS |
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Description
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Dual N-Channel Enhancement Power MOSFET |
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Published
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Oct 31, 2018 |
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Detailed Description
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DP8205B
www.depuw.com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev1.0
DP8205B us...
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Datasheet
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DP8205B
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Overview
DP8205B
www.
depuw.
com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev1.
0
DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 2.
5V)
20 V 6.
5A 22mΩ 27mΩ
SOT23-6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta
Maximum Power Dissipationa Operating Junction and Storage Temperature Ran...
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