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DP8205

DEVELOPER MICROELECTRONICS
Part Number DP8205
Manufacturer DEVELOPER MICROELECTRONICS
Description Dual N-Channel Enhancement Power MOSFET
Published Oct 31, 2018
Detailed Description DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses...
Datasheet PDF File DP8205 PDF File

DP8205
DP8205

Overview
DP8205 www.
depuw.
com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.
1 DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 2.
5V) 20 V 5.
0A < 29mΩ < 34mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±12 5 20 2.
5 1.
25 -55 To 150 Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient a Symbol RθJA Limit 100 DEVELOPER MICROELECTRONICS Unit V V A A A W ℃ Unit ℃/W １ Dual N-Channel Enhancement Power MOSFET Electr...


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