2N2958 (SILICON)
2N2959 2N3115 2N3116
NPN silicon annular Star
transistors for high- speed "switching and amplifier applications.
CASE 22
(TO·18)
2N2958 2N2959
2N3115 2N3116
Collector connected to case
MAXIMUM RATINGS
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current
Total Device Dissipation 25°C Case Temperature
Derate above 25°C
Total Device Dissipation 25°C Ambient Temperature
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
~~~;~~
(TO·S)
VCB 60
2N311S 2N3ll6 (TO·1S)
60
Unit Vdc
VCEO 20
20 Vdc
VEB
5.
0 5.
0 Vdc
IC 600 600 mAdc
PD 3.
0 1.
8 watts 20 12 mW/oC
PD 0.
6 0.
4 watts 4.
00 2.
67 mW/OC
TJ -65 to +1...