2N2476 (SILICON) 2N2477
NPN silicon annular
transistors designed for highspeed, low-power saturated switching applications.
CASE 31
(TO-5)
Collector connected td case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Total Device Dissipation @ TA = 25° C
Derate above 25° C
PD
Total Device Dissipation @ T C = 25° C
Derate above 25° C
PD
Operating & Storage Junction Temperature Range
Tj' Tstg
Value
20
60
5.
0
0.
6 3.
4 2.
0 11.
4 -65 to +200
Unit
Vdc
Vdc
Vdc
Watt mW/oC Watts mW/oC
°c
FIGURE 1- TURN-ON TIME TEST CIRCUIT
Vin Z=500
10000 500
400 V of out
o -.
.
I2ns : (max)
PW 150 ns D.
C.
210
I
6.
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