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2N2410

Part Number	2N2410
Manufacturer	Motorola
Description	NPN.silicon annular transistor
Published	Nov 7, 2018
Detailed Description	2N2405 For Specifications, See 2N1893 Data. 2N2410 (SILICON) CASE 31 (TO·5) NPN.silicon annular transistor designed ...
Datasheet	2N2410 PDF File

Overview

2N2405 For Specifications, See 2N1893 Data.
2N2410 (SILICON) CASE 31 (TO·5) NPN.
silicon annular transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltaga RBE = 10 ohms VCEO VCER Collector-Base Voltage VeB Emitter-Base voitage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ Te = 25°C Derate above 25°C VEB IC PD PD Operating Junction Temperature Range TJ Storage Temperature Range Tstg Value 30 40 60 5.
0 800 800 4.
57 2.
5 14.
3 200 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/oC Watts mW/oe °c °c 2-296 2N2410 (continued) ELECTRICAL CHARACTERISTICS (T.
= 25'e ,,'''' ,th,,.
.
'" ,p,,,',,d) Characteristic I Symbol OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAde.
IB = 0) BV CEO (sus) Collector-Emitter Breakdown Voltage III (Ic = 30 mAde.
RBE = 10 ohms) BV...

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