2N2242 (SILICON)
CASE 22
(TO·1S)
NPN silicon annular
transistors designed for highspeed, low-power saturated switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @' TA -= 25° C
Derate above 25° C Junction Temperature - Operating Storage Temperature Range
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
5.
0k
5.
0 k
Symbol
Value
Unit
VCEO VCB VEB IC PD
T.
T Tstg
15 40 5.
0 225 360 2.
0 -65 to +200 -65 to +200
+ 3.
0 v (Vee)
Vdc
Vdc
Vdc
mAdc
mWatts mW/oC
°c °c
30
;
-
240 -.
JV\
I'
v--
.
0.
1 I1_F
_.
.
.
.
u----1.
.
---O
seOPE
z ~ 100 k
PULSE WIDTH 96 ns 51
PRR 120 Hz
t .
.
.
Q!!.
...