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Part Number
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Si9955DY |
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Manufacturer
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TEMIC |
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Description
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Dual N-Channel Enhancement-Mode MOSFET |
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Published
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Nov 20, 2018 |
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Detailed Description
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Si9955DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
rDS(on) (W)
0.13 @ VGS = 10 V 50
0.20 @ VGS ...
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Datasheet
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Si9955DY
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Overview
Si9955DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
rDS(on) (W)
0.
13 @ VGS = 10 V 50
0.
20 @ VGS = 4.
5 V
Recommended upgrade: Si9945DY
ID (A) "3.
0 "1.
5
D1 D1
D2 D2
SO-8
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
50 "20 "3.
0 ...
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