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Si9955DY

TEMIC
Part Number Si9955DY
Manufacturer TEMIC
Description Dual N-Channel Enhancement-Mode MOSFET
Published Nov 20, 2018
Detailed Description Si9955DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.13 @ VGS = 10 V 50 0.20 @ VGS ...
Datasheet PDF File Si9955DY PDF File

Si9955DY
Si9955DY

Overview
Si9955DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.
13 @ VGS = 10 V 50 0.
20 @ VGS = 4.
5 V Recommended upgrade: Si9945DY ID (A) "3.
0 "1.
5 D1 D1 D2 D2 SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 50 "20 "3.
0 "2.
3 "10 2.
0 2.
0 1.
3 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.
5 _C/W Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
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