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AFP2311

Part Number AFP2311
Manufacturer Alfa-MOS
Description 20V P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet AFP2311




Overview
Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L ) AFP2311 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.
0A,RDS(ON)=56mΩ@VGS=4.
5V -20V/-3.
2A,RDS(ON)=70mΩ@VGS=2.
5V -20V/-2.
8A,RDS(ON)=100mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current cap...






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