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AFP2311A

Alfa-MOS
Part Number AFP2311A
Manufacturer Alfa-MOS
Description 20V P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP2311A PDF File

AFP2311A
AFP2311A

Overview
Alfa-MOS Technology General Description AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 ) AFP2311A 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.
8A,RDS(ON)=55mΩ@VGS=4.
5V -20V/-2.
2A,RDS(ON)=70mΩ@VGS=2.
5V -20V/-1.
8A,RDS(ON)=92mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package AFP2311AS23RG 11YW SOT-23 ϡʳ 11 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week cod...


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