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Part Number
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AFP2913W |
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Manufacturer
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Alfa-MOS |
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Description
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P-Channel Enhancement Mode MOSFET |
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Published
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Nov 22, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
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Datasheet
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AFP2913W
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Overview
Alfa-MOS
Technology
General Description
AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFP2913W
25V P-Channel Enhancement Mode MOSFET
Features
z -25V/-4.
5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.
8A,RDS(ON)=155mΩ@VGS=-4.
5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z DFN2X2-6L p...
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