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AFP2913W

Alfa-MOS
Part Number AFP2913W
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP2913W PDF File

AFP2913W
AFP2913W

Overview
Alfa-MOS Technology General Description AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L ) AFP2913W 25V P-Channel Enhancement Mode MOSFET Features z -25V/-4.
5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.
8A,RDS(ON)=155mΩ@VGS=-4.
5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L p...


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