Part Number
|
AFN8206WS |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel MOSFET |
Published
|
Nov 24, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
|
Datasheet
|
AFN8206WS
|
Overview
Alfa-MOS
Technology
General Description
AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X3-6L )
AFN8206WS
20V N-Channel Enhancement Mode MOSFET
Features
20V/3.
0A,RDS(ON)=11mΩ@VGS=4.
5V 20V/3.
0A,RDS(ON)=13mΩ@VGS=2.
5V 20V/2.
5A,RDS(ON)=20mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) ESD Protection ( 2KV ) Diode design–in DFN2X3-6L package design
Application
Load Switch Portable Equipment Battery Powered System
P...
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