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AFN8206WS

Alfa-MOS
Part Number AFN8206WS
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Nov 24, 2018
Detailed Description Alfa-MOS Technology General Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFN8206WS PDF File

AFN8206WS
AFN8206WS


Overview
Alfa-MOS Technology General Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features 20V/3.
0A,RDS(ON)=11mΩ@VGS=4.
5V 20V/3.
0A,RDS(ON)=13mΩ@VGS=2.
5V 20V/2.
5A,RDS(ON)=20mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) ESD Protection ( 2KV ) Diode design–in DFN2X3-6L package design Application Load Switch Portable Equipment Battery Powered System P...



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