P-Channel Enhancement Mode Power MOSFET Description The HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -.
1A RDS(ON) 75mΩ @ VGS=-2.
5V RDS(ON) 52mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management HM2305PR D G S Schematic diagram HM2305PR SOT-89-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM2305PR HM2305PR ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)