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HM2305

H&M Semiconductor
Part Number HM2305
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description +0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excell...
Datasheet PDF File HM2305 PDF File

HM2305
HM2305

Overview
+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -4.
1A RDS(ON) <75mΩ @ VGS=-2.
5V RDS(ON) < 52mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D G S Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2305 +02305 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ ID TA =70℃ ...


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