Part Number
|
HM6409 |
Manufacturer
|
H&M Semiconductor |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
P-Channel Enhancement Mode Power MOSFET
Description
The HM6409 uses advanced trench technology to provide excellent RDS(...
|
Datasheet
|
HM6409
|
Overview
P-Channel Enhancement Mode Power MOSFET
Description
The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -20V,ID = -5.
0A RDS(ON) 75mΩ @ VGS=-2.
5V RDS(ON) 52mΩ @ VGS=-4.
5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM applications ● Load switch ● Power management
HM6409
D G
S Schematic diagram
Marking and pin Assignment
SOT-23-L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6409
HM6409
SOT-...
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