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HM6409

H&M Semiconductor
Part Number HM6409
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description P-Channel Enhancement Mode Power MOSFET Description The HM6409 uses advanced trench technology to provide excellent RDS(...
Datasheet PDF File HM6409 PDF File

HM6409
HM6409

Overview
P-Channel Enhancement Mode Power MOSFET Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -5.
0A RDS(ON) <75mΩ @ VGS=-2.
5V RDS(ON) < 52mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management HM6409 D G S Schematic diagram Marking and pin Assignment SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package 6409 HM6409 SOT-...


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