HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -30V,ID = -5.
0A RDS(ON) 130mΩ @ VGS=-2.
5V RDS(ON) 75mΩ @ VGS=-4.
5V RDS(ON) 65mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23-L top view Package Marking And Ordering Information Device Marking Device Device...

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