Part Number
|
HM2P10R |
Manufacturer
|
H&M Semiconductor |
Description
|
Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM2P10R
Power MOSFET Datasheet
P-Channel Enhancement Mode MOSFET
FEATURES
◆ RDS(Typ.) 250 mΩ@VGS = -10 V ◆ RDS(Typ.)...
|
Datasheet
|
HM2P10R
|
Overview
HM2P10R
Power MOSFET Datasheet
P-Channel Enhancement Mode MOSFET
FEATURES
◆ RDS(Typ.
) 250 mΩ@VGS = -10 V ◆ RDS(Typ.
) 300 mΩ@VGS = -4.
5V ◆ Gross Die = 9600
APPLICATIONS
◆ Battery Charge ◆ Load Switching ◆ Power Converter
D
G
S Schematic diagram
SOT-223 top view
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1
ID IDM
Maximum Power Dissipation
PD
Storage Temperature Range
TSTG
Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2
TJ RθJA
Ratings -100 ±20 -5 -1...
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