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HM2P10PR

H&M Semiconductor
Part Number HM2P10PR
Manufacturer H&M Semiconductor
Description Power MOSFET
Published Nov 27, 2018
Detailed Description HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDS(Typ.) < 250 mΩ@VGS = -10 V ◆ RDS(Typ....
Datasheet PDF File HM2P10PR PDF File

HM2P10PR
HM2P10PR

Overview
HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDS(Typ.
) < 250 mΩ@VGS = -10 V ◆ RDS(Typ.
) < 300 mΩ@VGS = -4.
5V ◆ Gross Die = 9600 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter   D G S Schematic diagram   SOT-89-3L top view   Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2 Symbol VDS VGS ID IDM PD TSTG TJ RθJA  Ratings -100 ±20 -5 -15 2.
1 -55 to +150 -55 to +150 60 Unit V V A A W °C °C °C/W HM2P10PR Power MOSFET Datasheet Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Conditions Min.
Typ.
Max.
Unit OFF Characteristics Drain-Source Breakdown Voltage Zero Gate Volta...


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