Part Number
|
HM2P10PR |
Manufacturer
|
H&M Semiconductor |
Description
|
Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM2P10PR
Power MOSFET Datasheet
P-Channel Enhancement Mode MOSFET
FEATURES
◆ RDS(Typ.) 250 mΩ@VGS = -10 V ◆ RDS(Typ....
|
Datasheet
|
HM2P10PR
|
Overview
HM2P10PR
Power MOSFET Datasheet
P-Channel Enhancement Mode MOSFET
FEATURES
◆ RDS(Typ.
) 250 mΩ@VGS = -10 V ◆ RDS(Typ.
) 300 mΩ@VGS = -4.
5V ◆ Gross Die = 9600
APPLICATIONS
◆ Battery Charge ◆ Load Switching ◆ Power Converter
D G
S Schematic diagram
SOT-89-3L top view
Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2
Symbol VDS VGS ID IDM PD TSTG TJ RθJA
Ratings -100 ±20 -5...
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