HM4813 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -30V,ID = -7A RDS(ON) 70mΩ @ VGS=-4.
5V RDS(ON) 42mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4813 ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Pa...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)