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HM4821

H&M Semiconductor
Part Number HM4821
Manufacturer H&M Semiconductor
Description Dual P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4821 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and design ...
Datasheet PDF File HM4821 PDF File

HM4821
HM4821

Overview
HM4821 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for high current load applications.
G1 D1 G2 D2 General Features ● VDS =-60V,ID =-6.
5A RDS(ON) <45mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation S1 S2 Schematic diagram HM4821 Application ● Load switch Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4821 HM4821 SOP8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃)...


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