HM4821 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for high current load applications.
G1 D1 G2 D2 General Features ● VDS =-60V,ID =-6.
5A RDS(ON) 45mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation S1 S2 Schematic diagram HM4821 Application ● Load switch Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marki...

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