Part Number
|
HM2N10 |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
N-Channel Enhancement Mode Power MOSFET
Description
The +01 uses advanced trench technology and design to provide exc...
|
Datasheet
|
HM2N10
|
Overview
N-Channel Enhancement Mode Power MOSFET
Description
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 2A RDS(ON) 240mΩ @ VGS=10V (Typ:210mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
+01
D G
S Schematic diagram
TO-92 view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0102Z
+01
TO-92
Reel Siz...
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