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HM2N15R

H&M Semiconductor
Part Number HM2N15R
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM2N15R uses advanced trench technology and design to provide ex...
Datasheet PDF File HM2N15R PDF File

HM2N15R
HM2N15R

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits HM2N15R D G S Schematic diagram HM2N15R SOT-223-3L view Package Marking and Ordering Information Device Marking Device Device Package HM2N15R HM2N15R SOT-223-3L Reel Size Ø330m...


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