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Part Number
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Si2312BDS |
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Manufacturer
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Vishay |
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Description
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N-Channel MOSFET |
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Published
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Nov 27, 2018 |
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Detailed Description
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N-Channel 20 V (D-S) MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.031 at VGS = 4.5 V 0...
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Datasheet
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Si2312BDS
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Overview
N-Channel 20 V (D-S) MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.
031 at VGS = 4.
5 V 0.
037 at VGS = 2.
5 V 0.
047 at VGS = 1.
8 V
ID (A) 5.
0 4.
6 4.
1
Qg (Typ.
) 7.
5
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2312BDS (M2)* * Marking Code
Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a ...
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