DatasheetsPDF.com

Si2312BDS

Vishay
Part Number Si2312BDS
Manufacturer Vishay
Description N-Channel MOSFET
Published Nov 27, 2018
Detailed Description N-Channel 20 V (D-S) MOSFET Si2312BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.031 at VGS = 4.5 V 0...
Datasheet PDF File Si2312BDS PDF File

Si2312BDS
Si2312BDS

Overview
N-Channel 20 V (D-S) MOSFET Si2312BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.
031 at VGS = 4.
5 V 0.
037 at VGS = 2.
5 V 0.
047 at VGS = 1.
8 V ID (A) 5.
0 4.
6 4.
1 Qg (Typ.
) 7.
5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2312BDS (M2)* * Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.
1 mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 20 ±8 5.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)