Part Number
|
AFP2319A |
Manufacturer
|
Alfa-MOS |
Description
|
P-Channel MOSFET |
Published
|
Nov 29, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFP2319A
|
Overview
Alfa-MOS
Technology
General Description
AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2319A
40V P-Channel Enhancement Mode MOSFET
Features
-40V/-3.
0A,RDS(ON)=100mΩ@VGS=-10V -40V/-2.
4A,RDS(ON)=130mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
Application
Load Switch DC-DC System
Pin Define
Pin 1 2 3
Symbol G S D
Orde...
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