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Part Number
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AFN2306AE |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel MOSFET |
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Published
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Nov 29, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
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Datasheet
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AFN2306AE
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Overview
Alfa-MOS
Technology
General Description
AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFN2306AE
20V N-Channel Enhancement Mode MOSFET
Features
20V/1.
8A,RDS(ON)=280mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=340mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=750mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi...
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