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AFN2306AE

Alfa-MOS
Part Number AFN2306AE
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Nov 29, 2018
Detailed Description Alfa-MOS Technology General Description AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFN2306AE PDF File

AFN2306AE
AFN2306AE

Overview
Alfa-MOS Technology General Description AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 ) AFN2306AE 20V N-Channel Enhancement Mode MOSFET Features 20V/1.
8A,RDS(ON)=280mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=340mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=750mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi...


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