Part Number
|
AFP3481S |
Manufacturer
|
Alfa-MOS |
Description
|
P-Channel MOSFET |
Published
|
Dec 1, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFP3481S
|
Overview
Alfa-MOS
Technology
General Description
AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOT-23-6L )
AFP3481S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-5.
4A,RDS(ON)=62mΩ@VGS=-10.
0V -30V/-4.
2A,RDS(ON)=90mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design
Application
Power Management in Note book LED Display DC-DC System LCD ...
Similar Datasheet