DatasheetsPDF.com

AFP3481S

Alfa-MOS
Part Number AFP3481S
Manufacturer Alfa-MOS
Description P-Channel MOSFET
Published Dec 1, 2018
Detailed Description Alfa-MOS Technology General Description AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP3481S PDF File

AFP3481S
AFP3481S

Overview
Alfa-MOS Technology General Description AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOT-23-6L ) AFP3481S 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.
4A,RDS(ON)=62mΩ@VGS=-10.
0V -30V/-4.
2A,RDS(ON)=90mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)