PE30H15K

N-Channel Enhancement Mode Power MOSFET Description The PE30H15k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE30H15K General Features ● VDS =30V,ID =150A RDS(ON) 3.0 mΩ @ VGS=10V RDS(ON) 4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fu...