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PE30H15K

semi one
Part Number PE30H15K
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The PE30H15k uses advanced trench technology and design to provide e...
Datasheet PDF File PE30H15K PDF File

PE30H15K
PE30H15K

Overview
N-Channel Enhancement Mode Power MOSFET Description The PE30H15k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
PE30H15K General Features ● VDS =30V,ID =150A RDS(ON) <3.
0 mΩ @ VGS=10V RDS(ON) <4.
0mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment TO-252 -2Ltop view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum...


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