Part Number
|
PE4953 |
Manufacturer
|
semi one |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
Dec 3, 2018 |
Detailed Description
|
PE4953
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE4953 uses advanced trench technology to provide excell...
|
Datasheet
|
PE4953
|
Overview
PE4953
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.
3A RDS(ON) 100mΩ @ VGS=-4.
5V RDS(ON) 49mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S2
Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOP-8 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Sour...
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