DatasheetsPDF.com

PE4946

Part Number	PE4946
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE4946 N-Channel Enhancement Mode Power MOSFET Description The PE4946 uses advanced trench technology and design to pro...
Datasheet	PE4946 PDF File

Overview

PE4946 N-Channel Enhancement Mode Power MOSFET Description The PE4946 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =60V,ID =4.
5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol...

Similar Datasheet

PE4946 N-Channel Enhancement Mode Power MOSFET - semi one
PE4953 P-Channel Enhancement Mode Power MOSFET - semi one

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)