Part Number
|
PED30H10G |
Manufacturer
|
semi one |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Dec 3, 2018 |
Detailed Description
|
N-Channel Enhancement Mode Power MOSFET
Description
The PED30H10G uses advanced trench technology and design to provide ...
|
Datasheet
|
PED30H10G
|
Overview
N-Channel Enhancement Mode Power MOSFET
Description
The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =100A RDS(ON) 5.
5mΩ @ VGS=10V
(Typ:4mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PED30H10G
Schematic diagram PDFN5x6-8L top view
Abs...
Similar Datasheet