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PED30H10G

semi one
Part Number PED30H10G
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The PED30H10G uses advanced trench technology and design to provide ...
Datasheet PDF File PED30H10G PDF File

PED30H10G
PED30H10G

Overview
N-Channel Enhancement Mode Power MOSFET Description The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =100A RDS(ON) <5.
5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PED30H10G Schematic diagram PDFN5x6-8L top view Abs...


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