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Part Number
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PE30H15 |
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Manufacturer
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semi one |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Dec 3, 2018 |
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Detailed Description
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N-Channel Enhancement Mode Power MOSFET
Description
The PE30H15 uses advanced trench technology and design to provide ex...
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Datasheet
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PE30H15
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Overview
N-Channel Enhancement Mode Power MOSFET
Description
The PE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =150A RDS(ON) 3.
0 mΩ @ VGS=10V RDS(ON) 4.
0mΩ @ VGS=4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PE30H15
Schematic diagram TO-220-3L top v...
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