Part Number
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AFN3609S |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Dec 6, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFN3609S
|
Overview
Alfa-MOS
Technology
General Description
AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN3609S
30V N-Channel Enhancement Mode MOSFET
Features
30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Info...
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