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AFN3609S

Alfa-MOS
Part Number AFN3609S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN3609S PDF File

AFN3609S
AFN3609S

Overview
Alfa-MOS Technology General Description AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L ) AFN3609S 30V N-Channel Enhancement Mode MOSFET Features 30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
Part Marking Package AFN3609S AFN3609ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3609ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Jan.
2012 Description Gate Drain Source Unit Tube Quantity 50 ...


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