Part Number
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AFN3630 |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Dec 6, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN3630, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
|
Datasheet
|
AFN3630
|
Overview
Alfa-MOS
Technology
General Description
AFN3630, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN3630
30V N-Channel Enhancement Mode MOSFET
Features
30V/20A,RDS(ON)=30mΩ@VGS=10V 30V/15A,RDS(ON)=38mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Power Management in Desktop Computer DC/DC Converter LCD Display inverter
Pin Define
Pin Symbol 1G 2D 3S
Ordering Information
Par...
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