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Part Number
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AFN1012E |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel MOSFET |
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Published
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Dec 10, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
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Datasheet
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AFN1012E
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Overview
Alfa-MOS
Technology
General Description
AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 )
AFN1012E
20V N-Channel Enhancement Mode MOSFET
Features
20V/0.
6A,RDS(ON)=360mΩ@VGS=4.
5V 20V/0.
5A,RDS(ON)=420mΩ@VGS=2.
5V 20V/0.
4A,RDS(ON)=560mΩ@VGS=1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design
Application
...
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