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AFN1012E

Alfa-MOS
Part Number AFN1012E
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Dec 10, 2018
Detailed Description Alfa-MOS Technology General Description AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN1012E PDF File

AFN1012E
AFN1012E

Overview
Alfa-MOS Technology General Description AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 ) AFN1012E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.
6A,RDS(ON)=360mΩ@VGS=4.
5V 20V/0.
5A,RDS(ON)=420mΩ@VGS=2.
5V 20V/0.
4A,RDS(ON)=560mΩ@VGS=1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package AFN1012ES52RG X SOT-523 ϡ...


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