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Part Number
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AFP2317 |
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Manufacturer
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Alfa-MOS |
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Description
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P-Channel Enhancement Mode MOSFET |
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Published
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Dec 11, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
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Datasheet
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AFP2317
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Overview
Alfa-MOS
Technology
General Description
AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP2317
40V P-Channel Enhancement Mode MOSFET
Features
-40V/-3.
6A,RDS(ON)=52mΩ@VGS=-10.
0V -40V/-3.
2A,RDS(ON)=67mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book LED Display DC-DC System LCD Pane...
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